onsemi Type P-Channel MOSFET, 3.5 A, 30 V Enhancement, 3-Pin SOT-23 NTR4171PT1G
- RS stock no.:
- 780-4749
- Mfr. Part No.:
- NTR4171PT1G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 146,35
(exc. VAT)
R 168,30
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 225 unit(s) ready to ship from another location
- Plus 5,100 unit(s) shipping from 25 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 5.854 | R 146.35 |
| 50 - 100 | R 5.708 | R 142.70 |
| 125 - 225 | R 5.536 | R 138.40 |
| 250 - 475 | R 5.315 | R 132.88 |
| 500 + | R 5.102 | R 127.55 |
*price indicative
- RS stock no.:
- 780-4749
- Mfr. Part No.:
- NTR4171PT1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 15.6nC | |
| Maximum Power Dissipation Pd | 1.25W | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4 mm | |
| Height | 1.01mm | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 15.6nC | ||
Maximum Power Dissipation Pd 1.25W | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Operating Temperature 150°C | ||
Width 1.4 mm | ||
Height 1.01mm | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Related links
- onsemi Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 SI2307CDS-T1-GE3
- Vishay TrenchFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- onsemi Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- onsemi Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- onsemi Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- onsemi Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- onsemi Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 NTR4502PT1G