onsemi Type P-Channel MOSFET, 1.9 A, 30 V Enhancement, 3-Pin SOT-23 NTR4502PT1G
- RS stock no.:
- 773-7897
- Mfr. Part No.:
- NTR4502PT1G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 37,51
(exc. VAT)
R 43,14
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 5,780 unit(s) shipping from 17 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | R 3.751 | R 37.51 |
| 100 - 240 | R 3.657 | R 36.57 |
| 250 - 490 | R 3.547 | R 35.47 |
| 500 - 990 | R 3.405 | R 34.05 |
| 1000 + | R 3.269 | R 32.69 |
*price indicative
- RS stock no.:
- 773-7897
- Mfr. Part No.:
- NTR4502PT1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.9A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 350mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 6nC | |
| Maximum Power Dissipation Pd | 1.25W | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Width | 1.3 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.9A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 350mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 6nC | ||
Maximum Power Dissipation Pd 1.25W | ||
Maximum Operating Temperature 150°C | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Width 1.3 mm | ||
Automotive Standard No | ||
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
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