onsemi Type P-Channel MOSFET, 1 A, 20 V Enhancement, 3-Pin SOT-23 NVR1P02T1G
- RS stock no.:
- 802-2534
- Mfr. Part No.:
- NVR1P02T1G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 tape of 50 units)*
R 161,55
(exc. VAT)
R 185,80
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 20 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 50 - 50 | R 3.231 | R 161.55 |
| 100 - 450 | R 3.15 | R 157.50 |
| 500 - 950 | R 3.056 | R 152.80 |
| 1000 - 1950 | R 2.933 | R 146.65 |
| 2000 + | R 2.816 | R 140.80 |
*price indicative
- RS stock no.:
- 802-2534
- Mfr. Part No.:
- NVR1P02T1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 400mW | |
| Typical Gate Charge Qg @ Vgs | 2.5nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.01mm | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 400mW | ||
Typical Gate Charge Qg @ Vgs 2.5nC | ||
Maximum Operating Temperature 150°C | ||
Height 1.01mm | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Automotive Standard AEC-Q101 | ||
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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