onsemi NTA Type P-Channel MOSFET, 760 mA, 20 V Enhancement, 3-Pin SC-75 NTA4151PT1G
- RS stock no.:
- 780-0504
- Mfr. Part No.:
- NTA4151PT1G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (50 units, in packs of 50)*
R 132,30
(exc. VAT)
R 152,15
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 350 unit(s) ready to ship from another location
- Plus 56,800 unit(s) shipping from 12 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | R 2.646 | R 132.30 |
| 100 - 200 | R 2.58 | R 129.00 |
| 250 - 450 | R 2.502 | R 125.10 |
| 500 - 950 | R 2.402 | R 120.10 |
| 1000 + | R 2.306 | R 115.30 |
*price indicative
- RS stock no.:
- 780-0504
- Mfr. Part No.:
- NTA4151PT1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 760mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | NTA | |
| Package Type | SC-75 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 300mW | |
| Forward Voltage Vf | -1.1V | |
| Maximum Gate Source Voltage Vgs | -6V, +6V | |
| Typical Gate Charge Qg @ Vgs | 2.1nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 800μm | |
| Length | 1.65mm | |
| Width | 900μm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 760mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series NTA | ||
Package Type SC-75 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 300mW | ||
Forward Voltage Vf -1.1V | ||
Maximum Gate Source Voltage Vgs -6V, +6V | ||
Typical Gate Charge Qg @ Vgs 2.1nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 800μm | ||
Length 1.65mm | ||
Width 900μm | ||
Automotive Standard No | ||
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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