onsemi NTA Type P-Channel MOSFET, 760 mA, 20 V Enhancement, 3-Pin SC-75
- RS stock no.:
- 121-6301
- Mfr. Part No.:
- NTA4151PT1G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 reel of 3000 units)*
R 2 820,00
(exc. VAT)
R 3 240,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 54,000 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | R 0.94 | R 2,820.00 |
| 6000 - 9000 | R 0.917 | R 2,751.00 |
| 12000 - 27000 | R 0.889 | R 2,667.00 |
| 30000 - 57000 | R 0.854 | R 2,562.00 |
| 60000 + | R 0.82 | R 2,460.00 |
*price indicative
- RS stock no.:
- 121-6301
- Mfr. Part No.:
- NTA4151PT1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 760mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-75 | |
| Series | NTA | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 2.1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 300mW | |
| Maximum Gate Source Voltage Vgs | 6 V | |
| Forward Voltage Vf | -1.1V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.8mm | |
| Width | 0.9 mm | |
| Standards/Approvals | No | |
| Length | 1.65mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 760mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-75 | ||
Series NTA | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 2.1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 300mW | ||
Maximum Gate Source Voltage Vgs 6 V | ||
Forward Voltage Vf -1.1V | ||
Maximum Operating Temperature 150°C | ||
Height 0.8mm | ||
Width 0.9 mm | ||
Standards/Approvals No | ||
Length 1.65mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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