P-Channel MOSFET, 760 mA, 30 V, 3-Pin SOT-23 Infineon IRLML5103TRPBF

RS stock no.:: 302-038
Mfr. Part No.:: IRLML5103TRPBF
Manufacturer:: Infineon

P-Channel MOSFET, 760 mA, 30 V, 3-Pin SOT-23 Infineon IRLML5103TRPBF

Bulk discount available

Subtotal (1 pack of 5 units)**

R 33 17

(exc. VAT)

R 38 14

(inc. VAT)

20 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

* Delivery dates may change based on your chosen quantity and delivery address.

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Units	Per unit	Per Pack**
5 - 20	R 6,634	R 33,17
25 - 95	R 6,468	R 32,34
100 - 245	R 6,274	R 31,37
250 - 495	R 6,024	R 30,12
500 +	R 5,784	R 28,92

**price indicative

RS stock no.:: 302-038
Mfr. Part No.:: IRLML5103TRPBF
Manufacturer:: Infineon

Infineon HEXFET Series MOSFET, 760mA Maximum Continuous Drain Current, 540 mW Maximum Power Dissipation - IRLML5103TRPBF

This MOSFET is a versatile electronic component suited for efficient power switching applications. It is designed for use in automation, electronics, and mechanical industries, offering a compact solution for high-performance tasks. Its enhancement channel mode improves operational efficiency, making it a popular choice in applications that require dependable MOSFET functionality.

Features & Benefits

• Compact SOT-23 package appropriate for space-constrained designs
• High continuous drain current of 760 mA for enhanced durability
• Maximum drain-source voltage of 30 V for a range of applications
• Low Rds(on) of 600mΩ minimises power loss and boosts efficiency
• Typical gate charge of 3.4nC lowers switching losses

Applications

• Utilised in power management and conversion solutions
• Suitable for industrial automation setups
• Ideal for switch-mode power supply designs
• Supports battery management systems in electronic devices
• Employed in motor control that require efficient power switching

How does the MOSFET perform in high-temperature environments?

It functions effectively at temperatures up to +150°C, ensuring consistent performance under challenging conditions.

What is the significance of the low Rds(on) value?

A low Rds(on) of 600mΩ reduces energy loss during operation, enhancing overall system efficiency.

Can this MOSFET be used in compact designs?

Yes, the SOT-23 package enables integration into compact applications without compromising performance.

What is the maximum gate-source voltage this device can handle?

It can tolerate a maximum gate-source voltage of ±20V, ensuring safe operation within specified limits.

How should the installation be approached for optimal performance?

Proper handling and layout on the PCB are crucial to ensure adequate thermal management and connectivity for optimal results.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	760 mA
Maximum Drain Source Voltage	30 V
Series	HEXFET
Package Type	SOT-23
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	600 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	540 mW
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	3.4 nC @ 10 V
Width	1.4mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Length	3.04mm
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	1.02mm
Forward Diode Voltage	1.2V