onsemi NTA N-Channel MOSFET, 915 mA, 20 V Enhancement, 3-Pin SC-75 NTA4153NT1G
- RS stock no.:
- 773-7872
- Mfr. Part No.:
- NTA4153NT1G
- Manufacturer:
- onsemi
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
R 29,46
(exc. VAT)
R 33,88
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 570 unit(s) ready to ship from another location
- Plus 33,800 unit(s) shipping from 03 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | R 2.946 | R 29.46 |
| 100 - 240 | R 2.872 | R 28.72 |
| 250 - 490 | R 2.786 | R 27.86 |
| 500 - 990 | R 2.675 | R 26.75 |
| 1000 + | R 2.568 | R 25.68 |
*price indicative
- RS stock no.:
- 773-7872
- Mfr. Part No.:
- NTA4153NT1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 915mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | NTA | |
| Package Type | SC-75 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9.5Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1.82nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -6V, +6V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 300mW | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.6mm | |
| Standards/Approvals | No | |
| Height | 800μm | |
| Length | 800μm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 915mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series NTA | ||
Package Type SC-75 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9.5Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1.82nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -6V, +6V | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 300mW | ||
Maximum Operating Temperature 150°C | ||
Width 1.6mm | ||
Standards/Approvals No | ||
Height 800μm | ||
Length 800μm | ||
Automotive Standard No | ||
N-Channel Power MOSFET, 20V, ON Semiconductor
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