ROHM RE1C001UN N-Channel MOSFET, 100 mA, 20 V Enhancement, 3-Pin SC-75 RE1C001UNTCL
- RS stock no.:
- 124-6782
- Mfr. Part No.:
- RE1C001UNTCL
- Manufacturer:
- ROHM
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 150 units)*
R 190,05
(exc. VAT)
R 218,55
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Plus 1,200 unit(s) shipping from 19 October 2026
- Final 1,050 unit(s) shipping from 26 October 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 150 - 600 | R 1.267 | R 190.05 |
| 750 - 1350 | R 1.235 | R 185.25 |
| 1500 - 3600 | R 1.198 | R 179.70 |
| 3750 - 7350 | R 1.15 | R 172.50 |
| 7500 + | R 1.104 | R 165.60 |
*price indicative
- RS stock no.:
- 124-6782
- Mfr. Part No.:
- RE1C001UNTCL
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | RE1C001UN | |
| Package Type | SC-75 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -8V, +8V | |
| Maximum Power Dissipation Pd | 150mW | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 1.7mm | |
| Height | 800μm | |
| Width | 960μm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series RE1C001UN | ||
Package Type SC-75 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -8V, +8V | ||
Maximum Power Dissipation Pd 150mW | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 1.7mm | ||
Height 800μm | ||
Width 960μm | ||
Automotive Standard No | ||
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
Related links
- Toshiba N-Channel MOSFET 30 V EnhancementLF(T
- ROHM RUM001L02 N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-723 RUM001L02T2CL
- onsemi NTA N-Channel MOSFET 20 V Enhancement, 3-Pin SC-75 NTA4153NT1G
- onsemi NTA4001N N-Channel MOSFET 20 V Enhancement, 3-Pin SC-75 NTA4001NT1G
- Vishay TrenchFET N-Channel MOSFET 20 V Enhancement, 3-Pin SC-75 SI1032R-T1-GE3
- Vishay Si1012CR N-Channel MOSFET 20 V Enhancement, 3-Pin SC-75 SI1012CR-T1-GE3
- ROHM RE1C001ZP Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-416 RE1C001ZPTL
- ROHM RZM001P02 Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-723 RZM001P02T2L