Renesas P-Channel MOSFET, 300 A, 60 V, 3-Pin TO-220 2SJ606-AZ
- RS stock no.:
- 772-5264P
- Mfr. Part No.:
- 2SJ606-AZ
- Manufacturer:
- Renesas Electronics
Bulk discount available
Subtotal 40 units (supplied in a bag)*
R 1 779,00
(exc. VAT)
R 2 045,84
(inc. VAT)
Stock information currently inaccessible
Units | Per unit |
|---|---|
| 40 - 198 | R 44.475 |
| 200 - 398 | R 43.14 |
| 400 - 998 | R 41.415 |
| 1000 + | R 39.76 |
*price indicative
- RS stock no.:
- 772-5264P
- Mfr. Part No.:
- 2SJ606-AZ
- Manufacturer:
- Renesas Electronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Renesas Electronics | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 300 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TO-220 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 23 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 120 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 120 nC @ 10 V | |
| Length | 10mm | |
| Transistor Material | Si | |
| Width | 8.5mm | |
| Height | 4.8mm | |
| Select all | ||
|---|---|---|
Brand Renesas Electronics | ||
Channel Type P | ||
Maximum Continuous Drain Current 300 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-220 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 23 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 120 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 120 nC @ 10 V | ||
Length 10mm | ||
Transistor Material Si | ||
Width 8.5mm | ||
Height 4.8mm | ||
P-Channel MOSFET, Renesas Electronics (NEC)
MOSFET Transistors, Renesas Electronics (NEC)
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