MPN

Renesas P-Channel MOSFET, 300 A, 60 V, 3-Pin TO-220 2SJ606-AZ

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Subtotal 40 units (supplied in a bag)*

R 1 779,00

(exc. VAT)

R 2 045,84

(inc. VAT)

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*price indicative

Specification

Technical data sheets

Legislation and Compliance

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Renesas Electronics
	Channel Type	P
	Maximum Continuous Drain Current	300 A
	Maximum Drain Source Voltage	60 V
	Package Type	TO-220
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	23 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.5V
	Maximum Power Dissipation	120 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	120 nC @ 10 V
	Length	10mm
	Number of Elements per Chip	1
	Width	8.5mm
	Transistor Material	Si
	Height	4.8mm

	Select all
	Brand Renesas Electronics
	Channel Type P
	Maximum Continuous Drain Current 300 A
	Maximum Drain Source Voltage 60 V
	Package Type TO-220
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 23 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.5V
	Maximum Power Dissipation 120 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 120 nC @ 10 V
	Length 10mm
	Number of Elements per Chip 1
	Width 8.5mm
	Transistor Material Si
	Height 4.8mm

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