MPN

Renesas N-Channel MOSFET, 300 A, 60 V, 3-Pin TO-3P 2SK3357-A

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Subtotal 20 units (supplied in a bag)*

R 1 929,00

(exc. VAT)

R 2 218,40

(inc. VAT)

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*price indicative

Specification

Technical data sheets

Legislation and Compliance

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Renesas Electronics
	Channel Type	N
	Maximum Continuous Drain Current	300 A
	Maximum Drain Source Voltage	60 V
	Package Type	TO-3P
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	8.8 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.5V
	Maximum Power Dissipation	150 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Width	4.7mm
	Typical Gate Charge @ Vgs	170 nC @ 10 V
	Length	15.7mm
	Transistor Material	Si
	Maximum Operating Temperature	+150 °C
	Height	20mm

	Select all
	Brand Renesas Electronics
	Channel Type N
	Maximum Continuous Drain Current 300 A
	Maximum Drain Source Voltage 60 V
	Package Type TO-3P
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 8.8 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.5V
	Maximum Power Dissipation 150 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Width 4.7mm
	Typical Gate Charge @ Vgs 170 nC @ 10 V
	Length 15.7mm
	Transistor Material Si
	Maximum Operating Temperature +150 °C
	Height 20mm

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