onsemi PowerTrench Type N-Channel MOSFET, 8 A, 150 V Enhancement, 3-Pin TO-252 FDD86250
- RS stock no.:
- 759-9484
- Mfr. Part No.:
- FDD86250
- Manufacturer:
- onsemi
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Bulk discount available
Subtotal (1 pack of 2 units)*
R 41,69
(exc. VAT)
R 47,944
(inc. VAT)
Add 74 units to get free delivery
In Stock
- Plus 1,378 unit(s) shipping from 12 February 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | R 20.845 | R 41.69 |
| 50 - 198 | R 20.325 | R 40.65 |
| 200 - 998 | R 19.715 | R 39.43 |
| 1000 - 2498 | R 18.925 | R 37.85 |
| 2500 + | R 18.17 | R 36.34 |
*price indicative
- RS stock no.:
- 759-9484
- Mfr. Part No.:
- FDD86250
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-252 | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 132W | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 2.39mm | |
| Width | 6.22 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-252 | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 132W | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 2.39mm | ||
Width 6.22 mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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