N-Channel MOSFET, 8 A, 150 V, 3-Pin DPAK onsemi FDD86250
- RS stock no.:
- 166-1704
- Mfr. Part No.:
- FDD86250
- Manufacturer:
- onsemi
Subtotal (1 reel of 2500 units)**
R 46 077 50
(exc. VAT)
R 52 990 00
(inc. VAT)
On back order for despatch 2025/07/11*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Not Available for premium delivery
Units | Per unit | Per Reel** |
|---|---|---|
| 2500 + | R 18,431 | R 46 077,50 |
**price indicative
- RS stock no.:
- 166-1704
- Mfr. Part No.:
- FDD86250
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 8 A | |
| Maximum Drain Source Voltage | 150 V | |
| Series | PowerTrench | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 45 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 132 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 23 nC @ 10 V | |
| Length | 6.73mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Width | 6.22mm | |
| Transistor Material | Si | |
| Height | 2.39mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 8 A | ||
Maximum Drain Source Voltage 150 V | ||
Series PowerTrench | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 45 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 132 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 23 nC @ 10 V | ||
Length 6.73mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Width 6.22mm | ||
Transistor Material Si | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
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