N-Channel MOSFET, 11.4 A, 150 V, 3-Pin DPAK onsemi FDD770N15A
- RS stock no.:
- 809-0938
- Mfr. Part No.:
- FDD770N15A
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 pack of 10 units)**
R 158 50
(exc. VAT)
R 182 30
(inc. VAT)
150 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Not Available for premium delivery
Units | Per unit | Per Pack** |
---|---|---|
10 - 40 | R 15,85 | R 158,50 |
50 - 90 | R 15,454 | R 154,54 |
100 - 490 | R 14,99 | R 149,90 |
500 - 990 | R 14,39 | R 143,90 |
1000 + | R 13,814 | R 138,14 |
**price indicative
- RS stock no.:
- 809-0938
- Mfr. Part No.:
- FDD770N15A
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 11.4 A | |
Maximum Drain Source Voltage | 150 V | |
Package Type | DPAK (TO-252) | |
Series | PowerTrench | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 77 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 56.8 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Width | 6.22mm | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 8.4 nC @ 10 V | |
Maximum Operating Temperature | +150 °C | |
Length | 6.73mm | |
Height | 2.39mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Manufacturer onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 11.4 A | ||
Maximum Drain Source Voltage 150 V | ||
Package Type DPAK (TO-252) | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 77 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 56.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Width 6.22mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 8.4 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 6.73mm | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
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