onsemi PowerTrench Type N-Channel MOSFET, 120 A, 75 V Enhancement, 3-Pin TO-263 FDB088N08
- RS stock no.:
- 759-9465
- Mfr. Part No.:
- FDB088N08
- Manufacturer:
- onsemi
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Bulk discount available
Subtotal (1 pack of 2 units)*
R 121,93
(exc. VAT)
R 140,22
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 23 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | R 60.965 | R 121.93 |
| 20 - 98 | R 59.44 | R 118.88 |
| 100 - 398 | R 57.655 | R 115.31 |
| 400 - 798 | R 55.35 | R 110.70 |
| 800 + | R 53.135 | R 106.27 |
*price indicative
- RS stock no.:
- 759-9465
- Mfr. Part No.:
- FDB088N08
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Series | PowerTrench | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 91nC | |
| Maximum Power Dissipation Pd | 160W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.25V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 11.33 mm | |
| Height | 4.83mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 75V | ||
Series PowerTrench | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 91nC | ||
Maximum Power Dissipation Pd 160W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.25V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 11.33 mm | ||
Height 4.83mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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