N-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK onsemi NTBS2D7N06M7
- RS stock no.:
- 185-8135
- Mfr. Part No.:
- NTBS2D7N06M7
- Manufacturer:
- onsemi
Subtotal (1 reel of 800 units)**
R 48 292 00
(exc. VAT)
R 55 536 00
(inc. VAT)
800 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Not Available for premium delivery
Units | Per unit | Per Reel** |
|---|---|---|
| 800 + | R 60,365 | R 48 292,00 |
**price indicative
- RS stock no.:
- 185-8135
- Mfr. Part No.:
- NTBS2D7N06M7
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 110 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 176 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Typical Gate Charge @ Vgs | 80 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Width | 9.65mm | |
| Length | 10.67mm | |
| Maximum Operating Temperature | +175 °C | |
| Forward Diode Voltage | 1.25V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.58mm | |
Select all | ||
|---|---|---|
Manufacturer onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 110 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 176 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Typical Gate Charge @ Vgs 80 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Width 9.65mm | ||
Length 10.67mm | ||
Maximum Operating Temperature +175 °C | ||
Forward Diode Voltage 1.25V | ||
Minimum Operating Temperature -55 °C | ||
Height 4.58mm | ||
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