Infineon OptiMOS 3 N-Channel MOSFET, 20 A, 60 V Enhancement, 8-Pin TSDSON BSZ067N06LS3GATMA1
- RS stock no.:
- 754-5364
- Mfr. Part No.:
- BSZ067N06LS3GATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 5 units)*
R 164,98
(exc. VAT)
R 189,725
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 4,900 left, ready to ship from another location
- Plus 5,000 unit(s) shipping from 08 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 5 - 120 | R 32.996 | R 164.98 |
| 125 - 495 | R 32.172 | R 160.86 |
| 500 - 2495 | R 31.206 | R 156.03 |
| 2500 - 24995 | R 29.958 | R 149.79 |
| 25000 + | R 28.76 | R 143.80 |
*price indicative
- RS stock no.:
- 754-5364
- Mfr. Part No.:
- BSZ067N06LS3GATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS 3 | |
| Package Type | TSDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 12.1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 69W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 0.83V | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.4mm | |
| Standards/Approvals | No | |
| Width | 3.4mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS 3 | ||
Package Type TSDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 12.1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 69W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 0.83V | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Operating Temperature 150°C | ||
Length 3.4mm | ||
Standards/Approvals No | ||
Width 3.4mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon OptiMOS 3 Type N-Channel MOSFET 60 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET 60 V Enhancement, 8-Pin TSDSON BSZ110N06NS3GATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 150 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET 150 V Enhancement, 8-Pin TSDSON BSZ520N15NS3GATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 250 V Enhancement, 8-Pin TSDSON BSZ16DN25NS3GATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 250 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET 40 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET 30 V Enhancement, 8-Pin TSDSON