Infineon OptiMOS 3 Type N-Channel MOSFET, 88 A, 200 V Enhancement, 3-Pin TO-220 IPP110N20N3GXKSA1

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R 151,26

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R 173,95

(inc. VAT)

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1 - 24R 151.26
25 - 99R 147.48
100 - 499R 143.06
500 - 999R 137.34
1000 +R 131.85

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Packaging Options:
RS stock no.:
752-8381
Mfr. Part No.:
IPP110N20N3GXKSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

88A

Maximum Drain Source Voltage Vds

200V

Series

OptiMOS 3

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

11mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

65nC

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

300W

Maximum Operating Temperature

175°C

Width

4.57 mm

Standards/Approvals

No

Length

10.36mm

Height

9.45mm

Automotive Standard

No

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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