Infineon OptiMOS 3 Type N-Channel MOSFET, 88 A, 200 V Enhancement, 3-Pin TO-220
- RS stock no.:
- 911-4899
- Mfr. Part No.:
- IPP110N20N3GXKSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 tube of 50 units)*
R 2 781,35
(exc. VAT)
R 3 198,55
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 50 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | R 55.627 | R 2,781.35 |
| 100 - 150 | R 54.237 | R 2,711.85 |
| 200 - 250 | R 52.61 | R 2,630.50 |
| 300 - 450 | R 50.505 | R 2,525.25 |
| 500 + | R 48.485 | R 2,424.25 |
*price indicative
- RS stock no.:
- 911-4899
- Mfr. Part No.:
- IPP110N20N3GXKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 88A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | OptiMOS 3 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 11mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.45mm | |
| Width | 4.57 mm | |
| Length | 10.36mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 88A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series OptiMOS 3 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 11mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Height 9.45mm | ||
Width 4.57 mm | ||
Length 10.36mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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