Infineon OptiMOS 3 Type N-Channel MOSFET, 34 A, 200 V Enhancement, 3-Pin TO-263 IPB320N20N3GATMA1

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R 64,25

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R 73,89

(inc. VAT)

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1 - 24R 64.25
25 - 99R 62.64
100 - 499R 60.76
500 - 999R 58.33
1000 +R 56.00

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Packaging Options:
RS stock no.:
752-8344
Mfr. Part No.:
IPB320N20N3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

34A

Maximum Drain Source Voltage Vds

200V

Series

OptiMOS 3

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

32mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

22nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

136W

Maximum Operating Temperature

175°C

Height

4.57mm

Standards/Approvals

No

Length

10.31mm

Width

9.45 mm

Automotive Standard

No

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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