DiodesZetex BSS123W Type N-Channel MOSFET, 170 mA, 100 V Enhancement, 3-Pin SC-70 BSS123W-7-F
- RS stock no.:
- 751-3660
- Mfr. Part No.:
- BSS123W-7-F
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 100 units)*
R 188,70
(exc. VAT)
R 217,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 200 unit(s) ready to ship from another location
- Plus 2,400 unit(s) shipping from 03 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 400 | R 1.887 | R 188.70 |
| 500 - 900 | R 1.84 | R 184.00 |
| 1000 - 2900 | R 1.785 | R 178.50 |
| 3000 - 5900 | R 1.713 | R 171.30 |
| 6000 + | R 1.645 | R 164.50 |
*price indicative
- RS stock no.:
- 751-3660
- Mfr. Part No.:
- BSS123W-7-F
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 170mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SC-70 | |
| Series | BSS123W | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 200mW | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Standards/Approvals | No | |
| Width | 1.35 mm | |
| Length | 2.2mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 170mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SC-70 | ||
Series BSS123W | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 200mW | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Standards/Approvals No | ||
Width 1.35 mm | ||
Length 2.2mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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