DiodesZetex BSS123 N-Channel MOSFET, 170 mA, 100 V Enhancement, 3-Pin SOT-23 BSS123-7-F
- RS stock no.:
- 738-4926
- Mfr. Part No.:
- BSS123-7-F
- Manufacturer:
- DiodesZetex
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Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 100 units)*
R 155,10
(exc. VAT)
R 178,40
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 12,100 unit(s) ready to ship from another location
- Plus 576,900 unit(s) shipping from 02 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 400 | R 1.551 | R 155.10 |
| 500 - 900 | R 1.512 | R 151.20 |
| 1000 - 2400 | R 1.466 | R 146.60 |
| 2500 - 4900 | R 1.408 | R 140.80 |
| 5000 + | R 1.351 | R 135.10 |
*price indicative
- RS stock no.:
- 738-4926
- Mfr. Part No.:
- BSS123-7-F
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 170mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | BSS123 | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 300mW | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Width | 1.4mm | |
| Length | 3mm | |
| Automotive Standard | AEC-Q104, AEC-Q100, AEC-Q101, AEC-Q200 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 170mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Series BSS123 | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 300mW | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Width 1.4mm | ||
Length 3mm | ||
Automotive Standard AEC-Q104, AEC-Q100, AEC-Q101, AEC-Q200 | ||
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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