Nexperia BSH203 Type P-Channel MOSFET, 470 mA, 30 V Enhancement, 3-Pin SOT-23 BSH203,215
- RS stock no.:
- 725-8366
- Mfr. Part No.:
- BSH203,215
- Manufacturer:
- Nexperia
Image representative of range
Bulk discount available
Subtotal (1 pack of 20 units)*
R 71,60
(exc. VAT)
R 82,40
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 2,220 unit(s) shipping from 17 March 2026
- Plus 3,000 unit(s) shipping from 08 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | R 3.58 | R 71.60 |
| 100 - 180 | R 3.491 | R 69.82 |
| 200 - 380 | R 3.386 | R 67.72 |
| 400 - 980 | R 3.251 | R 65.02 |
| 1000 + | R 3.121 | R 62.42 |
*price indicative
- RS stock no.:
- 725-8366
- Mfr. Part No.:
- BSH203,215
- Manufacturer:
- Nexperia
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 470mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | BSH203 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 417mW | |
| Forward Voltage Vf | -1.3V | |
| Typical Gate Charge Qg @ Vgs | 2.2nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Length | 3mm | |
| Width | 1.4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 470mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series BSH203 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 417mW | ||
Forward Voltage Vf -1.3V | ||
Typical Gate Charge Qg @ Vgs 2.2nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1mm | ||
Length 3mm | ||
Width 1.4 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
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