P-Channel MOSFET, 900 mA, 30 V, 3-Pin SOT-23 onsemi NDS352AP

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

• Voltage controlled P-Channel small signal switch
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology

• Load Switching
• DC/DC converter
• Battery protection
• Power management control
• DC motor control

The ON Semiconductor NDS352AP is P channel logic level enhancement mode power field effect transistors are produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize onstate resistance.

Exceptional on resistance and maximum DC current capability
Industry standard outline SOT-23 surface mount package

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.