IXYS HiperFET N-Channel MOSFET, 48 A, 500 V Enhancement, 3-Pin TO-264 IXFK48N50
- RS stock no.:
- 711-5367
- Distrelec Article No.:
- 302-53-350
- Mfr. Part No.:
- IXFK48N50
- Manufacturer:
- IXYS
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Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
R 556,71
(exc. VAT)
R 640,22
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 3 unit(s) ready to ship from another location
- Plus 267 unit(s) shipping from 22 September 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 1 | R 556.71 |
| 2 - 4 | R 542.79 |
| 5 - 9 | R 526.51 |
| 10 - 19 | R 505.45 |
| 20 + | R 485.23 |
*price indicative
- RS stock no.:
- 711-5367
- Distrelec Article No.:
- 302-53-350
- Mfr. Part No.:
- IXFK48N50
- Manufacturer:
- IXYS
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 48A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | HiperFET | |
| Package Type | TO-264 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 500W | |
| Typical Gate Charge Qg @ Vgs | 270nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.13mm | |
| Length | 19.96mm | |
| Standards/Approvals | No | |
| Height | 26.16mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 48A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series HiperFET | ||
Package Type TO-264 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 500W | ||
Typical Gate Charge Qg @ Vgs 270nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Width 5.13mm | ||
Length 19.96mm | ||
Standards/Approvals No | ||
Height 26.16mm | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Series
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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