Vishay Si7850DP Type N-Channel MOSFET, 6.2 A, 60 V Enhancement, 8-Pin SO-8 SI7850DP-T1-E3

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Subtotal (1 pack of 5 units)*

R 189,62

(exc. VAT)

R 218,065

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 20R 37.924R 189.62
25 - 95R 36.976R 184.88
100 - 245R 35.866R 179.33
250 - 495R 34.432R 172.16
500 +R 33.054R 165.27

*price indicative

Packaging Options:
RS stock no.:
710-4764
Mfr. Part No.:
SI7850DP-T1-E3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6.2A

Maximum Drain Source Voltage Vds

60V

Package Type

SO-8

Series

Si7850DP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

18nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

1.8W

Maximum Operating Temperature

150°C

Height

1.04mm

Width

5.89 mm

Length

4.9mm

Standards/Approvals

No

Automotive Standard

No

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor


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