Vishay TrenchFET Type N-Channel MOSFET, 10.9 A, 30 V Enhancement, 8-Pin SOIC SI4128DY-T1-GE3

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Subtotal (1 pack of 5 units)*

R 74,02

(exc. VAT)

R 85,125

(inc. VAT)

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Last RS stock
  • Final 130 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
5 - 20R 14.804R 74.02
25 - 95R 14.434R 72.17
100 - 245R 14.00R 70.00
250 - 495R 13.44R 67.20
500 +R 12.902R 64.51

*price indicative

Packaging Options:
RS stock no.:
710-3311
Mfr. Part No.:
SI4128DY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

10.9A

Maximum Drain Source Voltage Vds

30V

Package Type

SOIC

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.03Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

3.8nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

5W

Maximum Operating Temperature

150°C

Standards/Approvals

IEC 61249-2-21

Width

4 mm

Height

1.5mm

Length

5mm

Automotive Standard

No

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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