Vishay Si2325DS Type P-Channel MOSFET, 530 mA, 150 V Enhancement, 3-Pin SOT-23 SI2325DS-T1-E3

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Subtotal (1 pack of 5 units)*

R 97,96

(exc. VAT)

R 112,655

(inc. VAT)

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In Stock
  • Plus 15 unit(s) shipping from 01 June 2026
  • Plus 2,070 unit(s) shipping from 08 June 2026
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Units
Per unit
Per Pack*
5 - 20R 19.592R 97.96
25 - 95R 19.102R 95.51
100 - 245R 18.528R 92.64
250 - 495R 17.786R 88.93
500 +R 17.074R 85.37

*price indicative

Packaging Options:
RS stock no.:
710-3263
Mfr. Part No.:
SI2325DS-T1-E3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

530mA

Maximum Drain Source Voltage Vds

150V

Series

Si2325DS

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.2Ω

Channel Mode

Enhancement

Forward Voltage Vf

-1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

7.7nC

Maximum Power Dissipation Pd

750mW

Maximum Operating Temperature

150°C

Height

1.02mm

Standards/Approvals

No

Length

3.04mm

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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