Vishay Si7309DN Type P-Channel MOSFET, 8 A, 60 V Enhancement, 8-Pin PowerPAK 1212-8 SI7309DN-T1-E3
- RS stock no.:
- 710-3386
- Mfr. Part No.:
- SI7309DN-T1-E3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 118,21
(exc. VAT)
R 135,94
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 8,725 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | R 23.642 | R 118.21 |
| 25 - 95 | R 23.05 | R 115.25 |
| 100 - 245 | R 22.358 | R 111.79 |
| 250 - 495 | R 21.464 | R 107.32 |
| 500 + | R 20.606 | R 103.03 |
*price indicative
- RS stock no.:
- 710-3386
- Mfr. Part No.:
- SI7309DN-T1-E3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK 1212-8 | |
| Series | Si7309DN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.115Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -65°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 14.5nC | |
| Maximum Power Dissipation Pd | 19.8W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.04mm | |
| Width | 3.05 mm | |
| Length | 3.05mm | |
| Standards/Approvals | IEC 61249-2-21 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK 1212-8 | ||
Series Si7309DN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.115Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -65°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 14.5nC | ||
Maximum Power Dissipation Pd 19.8W | ||
Maximum Operating Temperature 150°C | ||
Height 1.04mm | ||
Width 3.05 mm | ||
Length 3.05mm | ||
Standards/Approvals IEC 61249-2-21 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay P-Channel MOSFET 60 V, 8-Pin PowerPAK 1212-8 SI7309DN-T1-E3
- Vishay P-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8 SI7129DN-T1-GE3
- Vishay P-Channel MOSFET 20 V, 8-Pin PowerPAK 1212-8 SI7615ADN-T1-GE3
- Vishay P-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8 SI7121DN-T1-GE3
- Vishay P-Channel MOSFET 20 V, 8-Pin PowerPAK 1212-8 SIS415DNT-T1-GE3
- Vishay TrenchFET P-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8 SISS27DN-T1-GE3
- Vishay TrenchFET Dual N/P-Channel MOSFET 100 V, 8-Pin PowerPAK 1212-8 Dual SiS590DN-T1-GE3
- Vishay TrenchFET P-Channel MOSFET 20 V, 8-Pin PowerPAK 1212-8 SISS23DN-T1-GE3