DiodesZetex ZXMN10A07F Type N-Channel MOSFET, 800 mA, 100 V Enhancement, 3-Pin SOT-23 ZXMN10A07FTA
- RS stock no.:
- 669-7679
- Mfr. Part No.:
- ZXMN10A07FTA
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 10 units)*
R 57,58
(exc. VAT)
R 66,22
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 210 unit(s) ready to ship from another location
- Plus 19,150 unit(s) shipping from 08 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 5.758 | R 57.58 |
| 50 - 190 | R 5.614 | R 56.14 |
| 200 - 490 | R 5.446 | R 54.46 |
| 500 - 990 | R 5.228 | R 52.28 |
| 1000 + | R 5.019 | R 50.19 |
*price indicative
- RS stock no.:
- 669-7679
- Mfr. Part No.:
- ZXMN10A07FTA
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 800mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-23 | |
| Series | ZXMN10A07F | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 700mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 806mW | |
| Typical Gate Charge Qg @ Vgs | 2.9nC | |
| Forward Voltage Vf | 0.95V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Length | 3.05mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 800mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-23 | ||
Series ZXMN10A07F | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 700mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 806mW | ||
Typical Gate Charge Qg @ Vgs 2.9nC | ||
Forward Voltage Vf 0.95V | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Length 3.05mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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