DiodesZetex ZXMN10A07F N-Channel MOSFET, 800 mA, 100 V Enhancement, 3-Pin SOT-23
- RS stock no.:
- 922-7954
- Mfr. Part No.:
- ZXMN10A07FTA
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 3000 units)*
R 13 767,00
(exc. VAT)
R 15 831,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 3,000 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | R 4.589 | R 13,767.00 |
| 6000 - 9000 | R 4.474 | R 13,422.00 |
| 12000 - 27000 | R 4.34 | R 13,020.00 |
| 30000 + | R 4.166 | R 12,498.00 |
*price indicative
- RS stock no.:
- 922-7954
- Mfr. Part No.:
- ZXMN10A07FTA
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 800mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-23 | |
| Series | ZXMN10A07F | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 700mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 2.9nC | |
| Maximum Power Dissipation Pd | 806mW | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.95V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Length | 3.05mm | |
| Width | 1.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 800mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-23 | ||
Series ZXMN10A07F | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 700mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 2.9nC | ||
Maximum Power Dissipation Pd 806mW | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.95V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Length 3.05mm | ||
Width 1.4mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- DE
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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