DiodesZetex Type N-Channel MOSFET, 100 mA, 100 V Enhancement, 3-Pin SOT-23 ZVN3310FTA
- RS stock no.:
- 155-018
- Mfr. Part No.:
- ZVN3310FTA
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 213,975
(exc. VAT)
R 246,075
(inc. VAT)
Add 200 units to get free delivery
In Stock
- 125 unit(s) ready to ship from another location
- Plus 23,650 unit(s) shipping from 19 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | R 8.559 | R 213.98 |
| 125 - 475 | R 8.345 | R 208.63 |
| 500 - 1225 | R 8.095 | R 202.38 |
| 1250 - 2475 | R 7.771 | R 194.28 |
| 2500 + | R 7.46 | R 186.50 |
*price indicative
- RS stock no.:
- 155-018
- Mfr. Part No.:
- ZVN3310FTA
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 330mW | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.05mm | |
| Width | 1.4 mm | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101, AEC-Q100, AEC-Q200 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 330mW | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.05mm | ||
Width 1.4 mm | ||
Height 1mm | ||
Automotive Standard AEC-Q101, AEC-Q100, AEC-Q200 | ||
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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