Infineon CoolMOS S5 N-Channel MOSFET, 20 A, 600 V Enhancement, 3-Pin TO-247 SPW20N60S5FKSA1
- RS stock no.:
- 354-6414
- Mfr. Part No.:
- SPW20N60S5FKSA1
- Manufacturer:
- Infineon
Image representative of range
Get a bulk buy discount
Add 10 more to save 2%
View bulk pricing optionsSubtotal (1 unit)*
R 104,38
(exc. VAT)
R 120,04
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 59 unit(s) shipping from 09 November 2026
- Plus 282 unit(s) shipping from 13 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Saving |
|---|---|---|
| 1 - 9 | R 104.38 | - |
| 10 + | R 101.77 | 2% |
*price indicative
- RS stock no.:
- 354-6414
- Mfr. Part No.:
- SPW20N60S5FKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | CoolMOS S5 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 79nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Power Dissipation Pd | 208W | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.3mm | |
| Standards/Approvals | No | |
| Height | 20.95mm | |
| Length | 15.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series CoolMOS S5 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 79nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Power Dissipation Pd 208W | ||
Maximum Operating Temperature 150°C | ||
Width 5.3mm | ||
Standards/Approvals No | ||
Height 20.95mm | ||
Length 15.9mm | ||
Automotive Standard No | ||
Infineon CoolMOS S5 Series MOSFET, 20A Maximum Continuous Drain Current, 208W Maximum Power Dissipation - SPW20N60S5FKSA1
This MOSFET is tailored for high voltage applications, delivering noteworthy efficiency and performance. It plays a vital role in industries that depend on effective power management and semiconductor functionality. Utilising advanced Si technology, it operates efficiently across a broad temperature spectrum, making it suitable for a variety of applications in automation and electrical systems.
Features & Benefits
• N-channel configuration enhances switching capabilities
• Maximum continuous drain current of 20A accommodates high loads
• High voltage rating of 600V for demanding use cases
• Ultra-low gate charge enhances switching efficiency
• Enhancement mode allows for precise operational control
Applications
• Power conversion in industrial automation systems
• Ideal for motor drives and control systems
• Power supplies for renewable energy
• UPS and backup power systems
What are the thermal resistance characteristics for this component?
The thermal resistance from junction to case is 0.6K/W, facilitating effective heat dissipation during operation.
Is it suitable for use in harsh environments?
Yes, it functions within a temperature range of -55°C to +150°C, allowing versatility for various conditions.
What is the maximum gate-to-source voltage that can be applied?
The maximum gate-source voltage is ±20V, providing flexibility in driving conditions.
Can it handle repetitive avalanche currents?
Yes, it can manage repetitive avalanche currents up to 20A, ensuring robustness against transient conditions.
How does it perform under pulsed drain conditions?
It can endure pulsed drain current limited to 40A, assuring reliability during short bursts of high current.
Related links
- Infineon CoolMOS S5 N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS C7 N-Channel MOSFET 600 V Enhancement, 5-Pin VSON IPL60R104C7AUMA1
- Infineon CoolMOS C6 N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS P6 N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IPW60R190P6FKSA1
- Infineon CoolMOS C6 N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IPW60R190C6FKSA1
- STMicroelectronics FDmesh N-Channel MOSFET 600 V Enhancement, 3-Pin TO-247 STW20NM60FD
- Toshiba TK N-Channel MOSFET 600 V EnhancementS1VF(S
- Toshiba DTMOSIV N-Channel MOSFET 600 V EnhancementS1VF(S