Infineon CoolMOS S5 Type N-Channel MOSFET, 20 A, 600 V Enhancement, 3-Pin TO-247 SPW20N60S5FKSA1

RS stock no.:: 354-6414
Mfr. Part No.:: SPW20N60S5FKSA1
Manufacturer:: Infineon

Infineon CoolMOS S5 Type N-Channel MOSFET, 20 A, 600 V Enhancement, 3-Pin TO-247 SPW20N60S5FKSA1

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R 130,71

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R 150,32

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45 unit(s) ready to ship from another location
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Units	Per unit
1 - 9	R 130.71
10 +	R 127.44

*price indicative

RS stock no.:: 354-6414
Mfr. Part No.:: SPW20N60S5FKSA1
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	20A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-247
	Series	CoolMOS S5
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	190mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	208W
	Typical Gate Charge Qg @ Vgs	79nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Width	5.3 mm
	Standards/Approvals	No
	Height	20.95mm
	Length	15.9mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 20A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-247
	Series CoolMOS S5
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 190mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 208W
	Typical Gate Charge Qg @ Vgs 79nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Width 5.3 mm
	Standards/Approvals No
	Height 20.95mm
	Length 15.9mm
	Automotive Standard No

Infineon CoolMOS S5 Series MOSFET, 20A Maximum Continuous Drain Current, 208W Maximum Power Dissipation - SPW20N60S5FKSA1

This MOSFET is tailored for high voltage applications, delivering noteworthy efficiency and performance. It plays a vital role in industries that depend on effective power management and semiconductor functionality. Utilising advanced Si technology, it operates efficiently across a broad temperature spectrum, making it suitable for a variety of applications in automation and electrical systems.

Features & Benefits

• N-channel configuration enhances switching capabilities

• Maximum continuous drain current of 20A accommodates high loads

• High voltage rating of 600V for demanding use cases

• Ultra-low gate charge enhances switching efficiency

• Enhancement mode allows for precise operational control

Applications

• Power conversion in industrial automation systems

• Ideal for motor drives and control systems

• Power supplies for renewable energy

• UPS and backup power systems

What are the thermal resistance characteristics for this component?

The thermal resistance from junction to case is 0.6K/W, facilitating effective heat dissipation during operation.

Is it suitable for use in harsh environments?

Yes, it functions within a temperature range of -55°C to +150°C, allowing versatility for various conditions.

What is the maximum gate-to-source voltage that can be applied?

The maximum gate-source voltage is ±20V, providing flexibility in driving conditions.

Can it handle repetitive avalanche currents?

Yes, it can manage repetitive avalanche currents up to 20A, ensuring robustness against transient conditions.

How does it perform under pulsed drain conditions?

It can endure pulsed drain current limited to 40A, assuring reliability during short bursts of high current.