Infineon CoolMOS S5 Type N-Channel MOSFET, 20 A, 600 V Enhancement, 3-Pin TO-247
- RS stock no.:
- 911-4818
- Mfr. Part No.:
- SPW20N60S5FKSA1
- Manufacturer:
- Infineon
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View bulk pricing optionsSubtotal (1 tube of 30 units)*
R 3 214,59
(exc. VAT)
R 3 696,78
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 330 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 120 | R 107.153 | R 3,214.59 |
| 150 + | R 104.475 | R 3,134.25 |
*price indicative
- RS stock no.:
- 911-4818
- Mfr. Part No.:
- SPW20N60S5FKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-247 | |
| Series | CoolMOS S5 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 208W | |
| Typical Gate Charge Qg @ Vgs | 79nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 20.95mm | |
| Length | 15.9mm | |
| Standards/Approvals | No | |
| Width | 5.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-247 | ||
Series CoolMOS S5 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 208W | ||
Typical Gate Charge Qg @ Vgs 79nC | ||
Maximum Operating Temperature 150°C | ||
Height 20.95mm | ||
Length 15.9mm | ||
Standards/Approvals No | ||
Width 5.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- GB
Infineon CoolMOS S5 Series MOSFET, 20A Maximum Continuous Drain Current, 208W Maximum Power Dissipation - SPW20N60S5FKSA1
This MOSFET is tailored for high voltage applications, delivering noteworthy efficiency and performance. It plays a vital role in industries that depend on effective power management and semiconductor functionality. Utilising advanced Si technology, it operates efficiently across a broad temperature spectrum, making it suitable for a variety of applications in automation and electrical systems.
Features & Benefits
• N-channel configuration enhances switching capabilities
• Maximum continuous drain current of 20A accommodates high loads
• High voltage rating of 600V for demanding use cases
• Ultra-low gate charge enhances switching efficiency
• Enhancement mode allows for precise operational control
Applications
• Power conversion in industrial automation systems
• Ideal for motor drives and control systems
• Power supplies for renewable energy
• UPS and backup power systems
What are the thermal resistance characteristics for this component?
The thermal resistance from junction to case is 0.6K/W, facilitating effective heat dissipation during operation.
Is it suitable for use in harsh environments?
Yes, it functions within a temperature range of -55°C to +150°C, allowing versatility for various conditions.
What is the maximum gate-to-source voltage that can be applied?
The maximum gate-source voltage is ±20V, providing flexibility in driving conditions.
Can it handle repetitive avalanche currents?
Yes, it can manage repetitive avalanche currents up to 20A, ensuring robustness against transient conditions.
How does it perform under pulsed drain conditions?
It can endure pulsed drain current limited to 40A, assuring reliability during short bursts of high current.
Related links
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