Infineon CoolMOS C7 N-Channel MOSFET, 20 A, 600 V Enhancement, 5-Pin VSON IPL60R104C7AUMA1
- RS stock no.:
- 214-9070
- Mfr. Part No.:
- IPL60R104C7AUMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (5 units, in packs of 5)*
R 542,63
(exc. VAT)
R 624,03
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 1,965 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 108.526 | R 542.63 |
| 10 - 95 | R 105.812 | R 529.06 |
| 100 - 245 | R 102.638 | R 513.19 |
| 250 - 495 | R 98.532 | R 492.66 |
| 500 + | R 94.59 | R 472.95 |
*price indicative
- RS stock no.:
- 214-9070
- Mfr. Part No.:
- IPL60R104C7AUMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | CoolMOS C7 | |
| Package Type | VSON | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 104mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 900mV | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 122W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 8.1mm | |
| Width | 8.1mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series CoolMOS C7 | ||
Package Type VSON | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 104mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 900mV | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 122W | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 8.1mm | ||
Width 8.1mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
The Infineon CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. These are suitable for hard and soft switching functions. It comes with increased power density solutions due to smaller packages. It Incorporates optimized PCB assembly and layout solutions.
Suitable for hard and soft switching
SMD package with very low parasitic inductance for easy device control
Related links
- Infineon CoolMOS C7 Type N-Channel MOSFET 600 V Enhancement, 5-Pin VSON
- Infineon CoolMOS C7 Type N-Channel MOSFET 650 V Enhancement, 5-Pin VSON
- Infineon CoolMOS C7 Type N-Channel MOSFET 650 V Enhancement, 5-Pin VSON IPL65R130C7AUMA1
- Infineon CoolMOS Type N-Channel MOSFET & Diode 650 V Enhancement, 5-Pin VSON
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 650 V Enhancement, 5-Pin VSON IPL60R105P7AUMA1
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 650 V Enhancement, 5-Pin VSON
- Infineon CoolMOS P7 Type N-Channel MOSFET & Diode 650 V Enhancement, 5-Pin VSON
- Infineon CoolMOS P6 Type N-Channel MOSFET 600 V Enhancement, 5-Pin VSON