Vishay SQS Type N-Channel MOSFET, 192 A, 30 V Enhancement, 8-Pin 1212-8SLW SQS120ELNW-T1_GE3

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Subtotal (1 pack of 5 units)*

R 131,95

(exc. VAT)

R 151,75

(inc. VAT)

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Orders below R 1 500,00 (exc. VAT) cost R 120,00.
In Stock
  • 3,000 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
5 - 45R 26.39R 131.95
50 - 95R 25.73R 128.65
100 - 245R 24.958R 124.79
250 - 995R 23.96R 119.80
1000 +R 23.002R 115.01

*price indicative

Packaging Options:
RS stock no.:
280-0030
Mfr. Part No.:
SQS120ELNW-T1_GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

192A

Maximum Drain Source Voltage Vds

30V

Package Type

1212-8SLW

Series

SQS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0033Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

88nC

Forward Voltage Vf

0.82V

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

119W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

3.3mm

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Vishay Automotive MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

100 percent Rg and UIS tested

AEC-Q101 qualified

Fully lead (Pb)-free device

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