Vishay SQS Type N-Channel MOSFET, 192 A, 30 V Enhancement, 8-Pin 1212-8SLW SQS120ELNW-T1_GE3

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Subtotal (1 pack of 5 units)*

R 135,67

(exc. VAT)

R 156,02

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45R 27.134R 135.67
50 - 95R 26.456R 132.28
100 - 245R 25.662R 128.31
250 - 995R 24.636R 123.18
1000 +R 23.65R 118.25

*price indicative

Packaging Options:
RS stock no.:
280-0030
Mfr. Part No.:
SQS120ELNW-T1_GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

192A

Maximum Drain Source Voltage Vds

30V

Series

SQS

Package Type

1212-8SLW

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0033Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Forward Voltage Vf

0.82V

Typical Gate Charge Qg @ Vgs

88nC

Maximum Power Dissipation Pd

119W

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Length

3.3mm

Automotive Standard

AEC-Q101

The Vishay Automotive MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

100 percent Rg and UIS tested

AEC-Q101 qualified

Fully lead (Pb)-free device

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