Vishay SiSS5623DN Type P-Channel MOSFET, 36.3 A, 60 V Enhancement, 8-Pin 1212-8S SISS5623DN-T1-GE3

Image representative of range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 4 units)*

R 174,752

(exc. VAT)

R 200,964

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 6,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
4 - 56R 43.688R 174.75
60 - 96R 42.595R 170.38
100 - 236R 41.318R 165.27
240 - 996R 39.665R 158.66
1000 +R 38.078R 152.31

*price indicative

Packaging Options:
RS stock no.:
280-0001
Mfr. Part No.:
SISS5623DN-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

36.3A

Maximum Drain Source Voltage Vds

60V

Series

SiSS5623DN

Package Type

1212-8S

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.046Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

10.1nC

Maximum Power Dissipation Pd

56.8W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

New generation power MOSFET

100 percent Rg and UIS tested

Ultra low RDS x Qg FOM product

Fully lead (Pb)-free device

Related links