Vishay SiR Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin SO-8 SIR638ADP-T1-UE3
- RS stock no.:
- 279-9958
- Mfr. Part No.:
- SIR638ADP-T1-UE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 4 units)*
R 231,12
(exc. VAT)
R 265,80
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 4 - 56 | R 57.78 | R 231.12 |
| 60 - 96 | R 56.335 | R 225.34 |
| 100 - 236 | R 54.645 | R 218.58 |
| 240 - 996 | R 52.46 | R 209.84 |
| 1000 + | R 50.363 | R 201.45 |
*price indicative
- RS stock no.:
- 279-9958
- Mfr. Part No.:
- SIR638ADP-T1-UE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SiR | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00088Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 165nC | |
| Maximum Power Dissipation Pd | 104W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.15mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SiR | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00088Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 165nC | ||
Maximum Power Dissipation Pd 104W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Length 5.15mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
Related links
- Vishay SiR Type N-Channel MOSFET 40 V Enhancement, 8-Pin SO-8 SIR638ADP-T1-UE3
- Vishay SiR Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8
- Vishay SiR Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8 SIR5108DP-T1-RE3
- Vishay SiR Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8 SIR5110DP-T1-RE3
- Vishay SiR Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8 SIR5112DP-T1-RE3
- Vishay SiR Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8 SIR5808DP-T1-RE3
- Vishay SiR Type N-Channel MOSFET 150 V Enhancement, 8-Pin PowerPAK SO-8 SIR5710DP-T1-RE3
- Vishay SiR Type N-Channel MOSFET 150 V Enhancement, 8-Pin PowerPAK SO-8 SIR5708DP-T1-RE3