Vishay SiR Type N-Channel MOSFET, 66.8 A, 80 V Enhancement, 8-Pin SO-8 SIR5808DP-T1-RE3

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Subtotal (1 pack of 5 units)*

R 159,63

(exc. VAT)

R 183,575

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45R 31.926R 159.63
50 - 95R 31.128R 155.64
100 - 245R 30.194R 150.97
250 - 995R 28.986R 144.93
1000 +R 27.826R 139.13

*price indicative

Packaging Options:
RS stock no.:
279-9956
Mfr. Part No.:
SIR5808DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

66.8A

Maximum Drain Source Voltage Vds

80V

Package Type

SO-8

Series

SiR

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00735Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

24nC

Maximum Power Dissipation Pd

65.7W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

5.15mm

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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