Vishay SiR Type N-Channel MOSFET, 66.8 A, 80 V Enhancement, 8-Pin SO-8 SIR5808DP-T1-RE3

Image representative of range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 5 units)*

R 152,92

(exc. VAT)

R 175,86

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 5,950 unit(s) shipping from 16 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 - 45R 30.584R 152.92
50 - 95R 29.82R 149.10
100 - 245R 28.926R 144.63
250 - 995R 27.768R 138.84
1000 +R 26.658R 133.29

*price indicative

Packaging Options:
RS stock no.:
279-9956
Mfr. Part No.:
SIR5808DP-T1-RE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

66.8A

Maximum Drain Source Voltage Vds

80V

Series

SiR

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.00735Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

65.7W

Typical Gate Charge Qg @ Vgs

24nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

5.15mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

Related links