Vishay SiR Type N-Channel MOSFET, 66.8 A, 80 V Enhancement, 8-Pin SO-8 SIR5808DP-T1-RE3
- RS stock no.:
- 279-9956
- Mfr. Part No.:
- SIR5808DP-T1-RE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 5 units)*
R 186,40
(exc. VAT)
R 214,35
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 5,950 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 37.28 | R 186.40 |
| 50 - 95 | R 36.348 | R 181.74 |
| 100 - 245 | R 35.258 | R 176.29 |
| 250 - 995 | R 33.848 | R 169.24 |
| 1000 + | R 32.494 | R 162.47 |
*price indicative
- RS stock no.:
- 279-9956
- Mfr. Part No.:
- SIR5808DP-T1-RE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 66.8A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | SiR | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00735Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 65.7W | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.15mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 66.8A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series SiR | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00735Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 65.7W | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 5.15mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
Fully lead (Pb)-free device
Very low RDS x Qg figure of merit
100 percent Rg and UIS tested
Related links
- Vishay SiR Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8 SIR5808DP-T1-RE3
- Vishay SiR Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8
- Vishay SiR Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8 SIR5108DP-T1-RE3
- Vishay SiR Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8 SIR5110DP-T1-RE3
- Vishay SiR Type N-Channel MOSFET 100 V Enhancement, 8-Pin SO-8 SIR5112DP-T1-RE3
- Vishay SiR Type N-Channel MOSFET 150 V Enhancement, 8-Pin PowerPAK SO-8 SIR5710DP-T1-RE3
- Vishay SiR Type N-Channel MOSFET 150 V Enhancement, 8-Pin PowerPAK SO-8 SIR5708DP-T1-RE3
- Vishay SiR Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK SO-8 SIR184LDP-T1-RE3