Vishay SiR Type N-Channel MOSFET, 55.9 A, 100 V Enhancement, 8-Pin SO-8 SIR5108DP-T1-RE3

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Subtotal (1 reel of 3000 units)*

R 40 068,00

(exc. VAT)

R 46 077,00

(inc. VAT)

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3000 +R 13.356R 40,068.00

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RS stock no.:
279-9941
Mfr. Part No.:
SIR5108DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

55.9A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

SiR

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0105Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

65.7W

Typical Gate Charge Qg @ Vgs

23nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

5.15mm

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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