Vishay SI Type N-Channel MOSFET, 17 A, 100 V Enhancement, 8-Pin SO-8 SI4190BDY-T1-GE3

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Subtotal (1 reel of 2500 units)*

R 34 610,00

(exc. VAT)

R 39 802,50

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +R 13.844R 34,610.00

*price indicative

RS stock no.:
279-9894
Mfr. Part No.:
SI4190BDY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

17A

Maximum Drain Source Voltage Vds

100V

Series

SI

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.093Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

8.4W

Typical Gate Charge Qg @ Vgs

95nC

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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