Vishay SI N-Channel MOSFET, 17 A, 100 V Enhancement, 8-Pin SO-8 SI4190BDY-T1-GE3

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Subtotal (1 pack of 4 units)*

R 222,84

(exc. VAT)

R 256,28

(inc. VAT)

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Units
Per unit
Per Pack*
4 - 56R 55.71R 222.84
60 - 96R 54.318R 217.27
100 - 236R 52.688R 210.75
240 - 996R 50.58R 202.32
1000 +R 48.558R 194.23

*price indicative

Packaging Options:
RS stock no.:
279-9895
Mfr. Part No.:
SI4190BDY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

17A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

SI

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.093Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

8.4W

Typical Gate Charge Qg @ Vgs

95nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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