Infineon ISZ Type N-Channel Power Transistor, 54 A, 135 V Enhancement, 8-Pin PG-TSDSON-8FL ISZ143N13NM6ATMA1

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R 250,58

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R 288,165

(inc. VAT)

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Per Pack*
5 - 45R 50.116R 250.58
50 - 95R 48.864R 244.32
100 +R 47.398R 236.99

*price indicative

RS stock no.:
349-155
Mfr. Part No.:
ISZ143N13NM6ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

Power Transistor

Channel Type

Type N

Maximum Continuous Drain Current Id

54A

Maximum Drain Source Voltage Vds

135V

Series

ISZ

Package Type

PG-TSDSON-8FL

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

14.3mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

21nC

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

95W

Maximum Operating Temperature

175°C

Standards/Approvals

IEC61249‑2‑21, JEDEC, J-STD-020, RoHS

Automotive Standard

No

COO (Country of Origin):
CN
The Infineon OptiMOS 6 power MOSFET 135 V Normal Level in PQFN 3.3x3.3 package. OptiMOS 6 135 V targets high power motor drive applications such as LEVs, e-forklifts, power and gardening tools, but also UPS applications which predominantly use 72 to 84 V batteries. This product effectively bridges the gap between the 120 V and 150 V MOSFETs and provides significant improvements in RDS(on) and cost, helping improve the system efficiency.

System cost reduction

Less paralleling required

Reduced VDS overshoot and switching losses

Higher power density designs

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