Infineon ISZ Type N-Channel Power Transistor, 109 A, 30 V Enhancement, 8-Pin PG-TSDSON-8 ISZ033N03LF2SATMA1
- RS stock no.:
- 348-903
- Mfr. Part No.:
- ISZ033N03LF2SATMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
R 158,70
(exc. VAT)
R 182,50
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 5,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | R 15.87 | R 158.70 |
| 100 - 240 | R 15.473 | R 154.73 |
| 250 - 490 | R 15.009 | R 150.09 |
| 500 - 990 | R 14.409 | R 144.09 |
| 1000 + | R 13.833 | R 138.33 |
*price indicative
- RS stock no.:
- 348-903
- Mfr. Part No.:
- ISZ033N03LF2SATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 109A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | ISZ | |
| Package Type | PG-TSDSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 71W | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249‑2‑21, RoHS, JEDEC | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 109A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series ISZ | ||
Package Type PG-TSDSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 71W | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249‑2‑21, RoHS, JEDEC | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon StrongIRFET 2 power MOSFET 30 V in PQFN 3.3 x 3.3 package. Infineon’s StrongIRFET 2 power MOSFET 30 V technology features a best-in-class RDS(on) of 3.3 mOhm in a PQFN 3.3 x 3.3 package. This product addresses a broad range of applications from low to high switching frequency.
General purpose products
Excellent robustness
Superior price/performance ratio
Broad availability at distributors
Standard packages and pin out
High manufacturing and supply standards
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