Vishay SISS Type N-Channel MOSFET, 26.2 A, 150 V Enhancement, 8-Pin PowerPAK 1212-8S SISS5710DN-T1-GE3
- RS stock no.:
- 268-8349
- Mfr. Part No.:
- SISS5710DN-T1-GE3
- Manufacturer:
- Vishay
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 214,76
(exc. VAT)
R 246,975
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 6,000 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 42.952 | R 214.76 |
| 50 - 95 | R 41.878 | R 209.39 |
| 100 - 245 | R 40.622 | R 203.11 |
| 250 - 995 | R 38.998 | R 194.99 |
| 1000 + | R 37.438 | R 187.19 |
*price indicative
- RS stock no.:
- 268-8349
- Mfr. Part No.:
- SISS5710DN-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 26.2A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | PowerPAK 1212-8S | |
| Series | SISS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0315Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Power Dissipation Pd | 54.3W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 26.2A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type PowerPAK 1212-8S | ||
Series SISS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0315Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Power Dissipation Pd 54.3W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N channel TrenchFET generation 5 power MOSFET is lead Pb and halogen free device. It is used in applications such as synchronous rectification, motor drive control, power supplies.
Very low figure of merit
ROHS compliant
UIS tested 100 percent
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