Vishay SiJA Type N-Channel MOSFET, 126 A, 40 V Enhancement, 4-Pin PowerPAK SO-8L SiJA54ADP-T1-GE3
- RS stock no.:
- 268-8322
- Mfr. Part No.:
- SiJA54ADP-T1-GE3
- Manufacturer:
- Vishay
Image representative of range
Subtotal (1 reel of 3000 units)*
R 37 059,00
(exc. VAT)
R 42 618,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 6,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | R 12.353 | R 37,059.00 |
*price indicative
- RS stock no.:
- 268-8322
- Mfr. Part No.:
- SiJA54ADP-T1-GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 126A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerPAK SO-8L | |
| Series | SiJA | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.0023Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Maximum Power Dissipation Pd | 65.7W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 5.13mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 126A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerPAK SO-8L | ||
Series SiJA | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.0023Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Maximum Power Dissipation Pd 65.7W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 5.13mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay N channel TrenchFET generation 4 power MOSFET is lead Pb and halogen free device. It has flexible leads which provide resilience to mechanical stress. It is used an application as synchronous rectification, dc or ac inverters.
Optimizes switching characteristics
ROHS compliant
UIS tested 100 percent
Related links
- Vishay Dual Silicon N-Channel MOSFET 40 V, 4-Pin PowerPAK SO-8L SiJA54ADP-T1-GE3
- Vishay Dual Silicon N-Channel MOSFET 150 V, 4-Pin PowerPAK 8 x 8L SIJH5700E-T1-GE3
- Vishay Dual Silicon N-Channel MOSFET 100 V, 8-Pin PowerPAK 1212-8 SIS112LDN-T1-GE3
- Vishay Dual Silicon N-Channel MOSFET 60 V, 8-Pin PowerPAK 1212-8 SIS184LDN-T1-GE3
- Vishay Dual Silicon N-Channel MOSFET 650 V, 8-Pin PowerPAK 10 x 12 SIHK105N60E-T1-GE3
- Vishay Dual Silicon N-Channel MOSFET 150 V, 8-Pin PowerPAK 1212-8S SISS5708DN-T1-GE3
- Vishay Dual Silicon N-Channel MOSFET 150 V, 8-Pin PowerPAK 1212-8S SISS5710DN-T1-GE3
- Vishay Dual Silicon N-Channel MOSFET 80 V, 4-Pin PowerPAK SO-8L SQJ186ELP-T1_GE3