Vishay Type N-Channel MOSFET, 126 A, 30 V Depletion, 8-Pin PowerPAK SO-8DC SIDR5102EP-T1-RE3

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Subtotal (1 pack of 2 units)*

R 146,37

(exc. VAT)

R 168,326

(inc. VAT)

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Last RS stock
  • Final 5,890 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
2 - 48R 73.185R 146.37
50 - 98R 71.355R 142.71
100 - 248R 69.215R 138.43
250 - 998R 66.445R 132.89
1000 +R 63.785R 127.57

*price indicative

Packaging Options:
RS stock no.:
252-0251
Mfr. Part No.:
SIDR5102EP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

126A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK SO-8DC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.01mΩ

Channel Mode

Depletion

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

46.1nC

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

6.15mm

Width

5.15 mm

Automotive Standard

AEC-Q101

The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

TrenchFET Gen V power MOSFET

Very low RDS - Qg figure-of-merit (FOM)

Tuned for the lowest RDS - Qoss FOM

100 % Rg and UIS tested

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