Infineon HEXFET Type N-Channel MOSFET, 33 A, 100 V Enhancement, 3-Pin TO-262 IRF540NLPBF

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Subtotal (1 tube of 50 units)*

R 1 407,25

(exc. VAT)

R 1 618,35

(inc. VAT)

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Units
Per unit
Per Tube*
50 +R 28.145R 1,407.25

*price indicative

RS stock no.:
165-8115
Mfr. Part No.:
IRF540NLPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

33A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-262

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

44mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

71nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

130W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Height

9.65mm

Width

4.83 mm

Standards/Approvals

No

Length

10.67mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel Power MOSFET 100V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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