Infineon HEXFET N-Channel MOSFET, 44 A, 150 V Enhancement, 8-Pin PQFN IRFH5015TRPBF
- RS stock no.:
- 130-0975
- Mfr. Part No.:
- IRFH5015TRPBF
- Manufacturer:
- Infineon
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View bulk pricing optionsSubtotal (5 units, in packs of 5)*
R 218,62
(exc. VAT)
R 251,42
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,360 unit(s) shipping from 06 October 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | R 43.724 | R 218.62 |
| 50 - 95 | R 42.63 | R 213.15 |
| 100 - 495 | R 41.352 | R 206.76 |
| 500 - 995 | R 39.698 | R 198.49 |
| 1000 + | R 38.11 | R 190.55 |
*price indicative
- RS stock no.:
- 130-0975
- Mfr. Part No.:
- IRFH5015TRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 44A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | HEXFET | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 31mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Power Dissipation Pd | 156W | |
| Maximum Operating Temperature | 150°C | |
| Length | 6mm | |
| Height | 850μm | |
| Standards/Approvals | No | |
| Width | 5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 44A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series HEXFET | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 31mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Power Dissipation Pd 156W | ||
Maximum Operating Temperature 150°C | ||
Length 6mm | ||
Height 850μm | ||
Standards/Approvals No | ||
Width 5mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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