Infineon iPB Type N-Channel MOSFET, 195 A, 60 V Enhancement, 3-Pin TO-263 IPB015N06NF2SATMA1

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Subtotal (1 pack of 2 units)*

R 104,74

(exc. VAT)

R 120,46

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 52.37R 104.74
10 - 48R 51.06R 102.12
50 - 98R 49.53R 99.06
100 - 248R 47.55R 95.10
250 +R 45.65R 91.30

*price indicative

Packaging Options:
RS stock no.:
262-5852
Mfr. Part No.:
IPB015N06NF2SATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

195A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.15mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.

Pb-free lead plating

RoHS compliant

Halogen free according to IEC61249-2-21

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