Infineon iPB Type N-Channel MOSFET, 195 A, 60 V Enhancement, 3-Pin TO-263 IPB015N06NF2SATMA1

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Subtotal (1 pack of 2 units)*

R 101,86

(exc. VAT)

R 117,14

(inc. VAT)

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Orders below R 1 500,00 (exc. VAT) cost R 120,00.
In Stock
  • 696 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 8R 50.93R 101.86
10 - 48R 49.655R 99.31
50 - 98R 48.165R 96.33
100 - 248R 46.24R 92.48
250 +R 44.39R 88.78

*price indicative

Packaging Options:
RS stock no.:
262-5852
Mfr. Part No.:
IPB015N06NF2SATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

195A

Maximum Drain Source Voltage Vds

60V

Series

iPB

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.15mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.

Pb-free lead plating

RoHS compliant

Halogen free according to IEC61249-2-21

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