Infineon IPD Type N-Channel MOSFET, 1.7 A P TO-252
- RS stock no.:
- 260-5139
- Mfr. Part No.:
- IPD60R3K3C6ATMA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal (1 reel of 2500 units)*
R 11 237,50
(exc. VAT)
R 12 922,50
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | R 4.495 | R 11,237.50 |
| 5000 + | R 4.383 | R 10,957.50 |
*price indicative
- RS stock no.:
- 260-5139
- Mfr. Part No.:
- IPD60R3K3C6ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.7A | |
| Package Type | TO-252 | |
| Series | IPD | |
| Channel Mode | P | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.7A | ||
Package Type TO-252 | ||
Series IPD | ||
Channel Mode P | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolMOS C6 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered.
Reduced gate charge (Q g)
Good body diode ruggedness
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